italian version

Aims :

Acquisition of knowledge on physics and technology of semiconductor devices.

Topics :

Intrinsic and doped semiconductors, thermal equilibrium, non-equilibrium. Ohmic current, mobility, diffusive current.
Metal-semiconductor junction.
P-n junction, junction at thermal equilibrium, continuity equation, current equation. Junction in reverse bias, charge, electric field and potential. Avalanche and zener phenomena
JFET, BJT, MOSC, MOSFET
Semiconductor technology
Use of SPICE simulator
(see www.laureaelettronica.univpm.it)


Textbooks :

1- documents in www.laureaelettronica.univpm.it
2- Muller Kamins, Device Electronics for integrated circuits, J.Wiley
3- De Castro, Teoria dei dispositivi a semiconduttore, edizioni scientifiche telettra, Patron Editore
4- A.S.Grove, Fisica e tecnologia dei dispositivi a semicondutore, Ingegneria Elettrica Franco Angeli
5- G.Soncini, Tecnologie Microelettroniche, Boringhieri
6- Y.P.Tsividis, "Operation and modeling of the MOS transistor," McGraw-Hill international editions, 1988

Exam :

Oral discussion of the arguments of the course.

Tutorial Session :

Tuesday and Thursday 10.30-12.30